Effects of Cobalt doping on the Structural, Optical, and Electrical Properties of SnO2 Nanostructures synthesized by SILAR Method

Undoped and cobalt (Co) doped tin oxide (SnO2) films were prepared onto glass slides via the successive ionic layer adsorption reaction (SILAR). Variable characterization methods applied to examine effects of impurities on physical properties SnO2 films. The performed measurements X-ray diffraction, Ultraviolet–visible spectrometer, Photoluminescence, Raman. No peak ascribed Co, SnO, or Sn was found in XRD spectrum which may indicate integration crystal lattices. And obtained peaks be related tetragonal rutile phase pure SnO2. SEM images exposed that Co dopant atoms affectedthe sample morphologies. optical analyses showed transmittance reflectance percentages dropped by introduction system as absorbance values samples increased. Thus,a red shift (2.6–1.8 eV) occurred bandgapsas concentration changed Raman spectra Co:SnO2 exhibited major peaksaround 481 cm−1, 571 cm−1 602 cm−1. In photoluminescence spectrum, it noted emission intensity can both increase decrease due different doping ratios nanostructures. Resistance displayed resistivity increased with increment concentration. However, shown electrical conductivities could after heat treatment substrates up 500 oC, a common behavior semiconductor materials.